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《Journal of Hunan University(Naturnal Science)》 1996-01
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Deposition of Plasma Enhancement Chemical Vapour Deposition Silicon Nitride

Tang Yuanhong(Department of Applied Physics, Hunan Univ,410082,Changsha,P R China)  
in the meantime Plasma Enhancement Chemical Vapour Deposition (PECVD) silicon nitride is only one which can grow on alloying devices at low temperature.We study in this paper various deposition parameters affecting thin film properties.The conditions of depositing high quality silicon nitride passivation film are reported. A new explanation is given in this paper on index of refraction vs. velocity of growing.
【CateGory Index】: TN304.055
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【Co-references】
Chinese Journal Full-text Database 10 Hits
1 MAO Hui-bing, XIN Pei-sheng, HU Mei-li, LAI Zong-sheng(Dept. of Electronic Science and Technology, East China Normal University , Shanghai 200062,China);Fabrication and function test of the micromechanicalMW/RF switches[J];Semiconductor Technology;2002-11
2 LI Cheng-shi1, GUO Fang-min1,2,LAI Zong-sheng1,GE Yu-ping1, XU Xin1,ZHU Zi-qiang1,LU Wei2 (1.Department of Electrical Engineering, East China Normal University, Shanghai 200062,China; 2.National Lab. for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,China);Simulation and Fatigue Analysis of MEMS RF Cantilevered Beam Switch[J];Semiconductor Technology;2004-10
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4 YUN Zhen-xin(State Owned No.970Factory,Chengdu610051,China);MEMS technology in RF /microwave wireless systems[J];Semiconductor Information;2002-02
5 ZHANG Yong-hua,DING Gui-fu,CAI Bing-chu,JIANG Zhen-xin (Research Institute of Micro /Nanometer Science&Technology,Shanghai Jiao Tong University,Shanghai200030,China);Developing RF MEMS switches technology[J];Semiconductor Information;2003-05
6 ZHU Jian 1,2 ,YU Yuan wei 2,LU Le 2,JIA Shi xing 2,ZHANG Long 2 (1. Dept. of Instrument Science & Engineering, Southeast University, Nanjing 210096, China; 2. Nanjing Electronic Devices Institute, Nanjing 210016, China);Two membrane microwave MEMS switches[J];Micronanoelectronic Technology;2003-Z1
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8 Zhao Yongjun, Wang Minjuan, Yang Yongjun, Liang Chunguang(Hebei Semiconductor Research Institute, Shijiazhuang 050002)Received 19 November 1997, revised manuscript received 23 February 1998;Study on Stress of PECVD SiN_x Film[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-03
9 Wei Huazheng 1,Guo Fangmin 1,Lai Zhongsheng 1,Zhu Shouzheng 1,Zhu Ziqiang 1, Li Xiaowei 2,Cheng Zhiqun 2 and Sun Xiaowei 2(1 College of Information Science & Technology,East China Normal University,Shanghai 200062,China) (2 Shanghai Institute o;Computer-Aided Design of RF-MEMS Switch[J];Chinese Journal of Semiconductors;2002-09
10 Ye Xiaoqin 1) Xu Ying 2) Li Yan 1) Gu Yahua 1) Zhou Hongyu 1) Wang Wenjing 2) (1)Institute of Low Energy Nuclear Physics,Beijng Normal University, 100875, Beijing,China; 2)Beijing Solar Energy Research Institute, 100083,Beijing,China);ANNEALING CHARACTERISTIC AND APPLICATION OF SILICON NITRIDE FILMS DEPOSITED BY PECVD[J];Journal of Beijing Normal University(Natural Science);2004-02
【Secondary References】
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1 LV Wen-long1,LUO Zhong-zi1,HE Xi2,Zhang Chun-quan1(1.Pen-Tung Sah MEMS Research Center,Xiamen University,Fujian Xiamen,361005,China;2.Department of Physics,Xiamen University,Fujian Xiamen,361005,China);Applied research on SiO_2 deposited by PECVD[J];Journal of Functional Materials and Devices;2008-01
2 Wang Dagang1,3 Zhang Dekun2,3(1.College of Mechanical and Electrical Engineering,China University of Mining and Technology,Xuzhou Jiangsu 221116,China;2.College of Materials Science and Engineering,China University of Mining and Technology,Xuzhou Jiangsu 221116,China;3.Biotribology Center of National Key Laboratory of Tribology,Beijing 100086,China);Preparation of Silicon-based Silicon Nitride Films by PECVD and Research on the Wearing Properties[J];Lubrication Engineering;2009-03
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