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《Journal of Hunan University(Naturnal Science)》 1996-01
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Deposition of Plasma Enhancement Chemical Vapour Deposition Silicon Nitride

Tang Yuanhong(Department of Applied Physics, Hunan Univ,410082,Changsha,P R China)  
in the meantime Plasma Enhancement Chemical Vapour Deposition (PECVD) silicon nitride is only one which can grow on alloying devices at low temperature.We study in this paper various deposition parameters affecting thin film properties.The conditions of depositing high quality silicon nitride passivation film are reported. A new explanation is given in this paper on index of refraction vs. velocity of growing.
【CateGory Index】: TN304.055
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Chinese Journal Full-text Database 2 Hits
1 ;Calculation of I-V Characteristics of Amorphous Silicon Schottky Diode[J];;1997-01
2 LI Xin-bei, ZHANG Fang-hui(School of Electric and Electronic Engineering, Shanxi University of Science and Technology, Xianyang 712081, China).;Effect of Plasma Enhanced Chemical Vapor Deposition Parameters on Characteristics of Silicon nitride Film[J];Materials Protection;2006-07
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8 Zhao Yongjun, Wang Minjuan, Yang Yongjun, Liang Chunguang(Hebei Semiconductor Research Institute, Shijiazhuang 050002)Received 19 November 1997, revised manuscript received 23 February 1998;Study on Stress of PECVD SiN_x Film[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-03
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10 Ye Xiaoqin 1) Xu Ying 2) Li Yan 1) Gu Yahua 1) Zhou Hongyu 1) Wang Wenjing 2) (1)Institute of Low Energy Nuclear Physics,Beijng Normal University, 100875, Beijing,China; 2)Beijing Solar Energy Research Institute, 100083,Beijing,China);ANNEALING CHARACTERISTIC AND APPLICATION OF SILICON NITRIDE FILMS DEPOSITED BY PECVD[J];Journal of Beijing Normal University(Natural Science);2004-02
【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 LV Wen-long1,LUO Zhong-zi1,HE Xi2,Zhang Chun-quan1(1.Pen-Tung Sah MEMS Research Center,Xiamen University,Fujian Xiamen,361005,China;2.Department of Physics,Xiamen University,Fujian Xiamen,361005,China);Applied research on SiO_2 deposited by PECVD[J];Journal of Functional Materials and Devices;2008-01
2 Wang Dagang1,3 Zhang Dekun2,3(1.College of Mechanical and Electrical Engineering,China University of Mining and Technology,Xuzhou Jiangsu 221116,China;2.College of Materials Science and Engineering,China University of Mining and Technology,Xuzhou Jiangsu 221116,China;3.Biotribology Center of National Key Laboratory of Tribology,Beijing 100086,China);Preparation of Silicon-based Silicon Nitride Films by PECVD and Research on the Wearing Properties[J];Lubrication Engineering;2009-03
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