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《JOURNAL OF HUNAN UNIVERSITY(NATURNAL SCIENCES)》 1996-01
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Deposition of Plasma Enhancement Chemical Vapour Deposition Silicon Nitride

Tang Yuanhong(Department of Applied Physics, Hunan Univ,410082,Changsha,P R China)  
in the meantime Plasma Enhancement Chemical Vapour Deposition (PECVD) silicon nitride is only one which can grow on alloying devices at low temperature.We study in this paper various deposition parameters affecting thin film properties.The conditions of depositing high quality silicon nitride passivation film are reported. A new explanation is given in this paper on index of refraction vs. velocity of growing.
【CateGory Index】: TN304.055
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【Co-references】
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1 ZHANG Gu-wan, LONG Fei (Chongqing Optoelectronics Research Institute, Chongqing 400060, China);Research on Technology for Si_3N_4 Thin Film Grown by PECVD[J];Semiconductor Optoelectronics;2001-03
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4 SUN Ke-fei,LI Zi-quan,LI Xin(College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China);Influence of Substrate Temperature on SiN Thin Film Deposited by RF Magnetron Reaction Sputtering[J];Semiconductor Technology;2007-06
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1 Tao Tao,Su Hui,Xie Zili,Zhang Rong,Liu Bin,Xiu Xiangqian,Li Yi,Han Ping,Shi Yi,Zheng Youdou(Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China);Research on Nitride Membranes Grown by PECVD[J];Micronanoelectronic Technology;2010-05
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