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《Journal of South China University of Technology(Natural Science Edition)》 1990-01
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AVALANCHE INJECTION OF HOT-ELECTRON FROM SILICON INTO RAPID THERMAL NITRIDED SIO_2 FILM

Yang Guangyou;Chen Pusheng and Zheng Xueren Dept.of Physics,South China Univ.of Tech.  
In this paper we reporte the experiment results of the relation- ship between the avalanche injection current of electron from sili- con into the rapid nitrided SiO_2 film,the flatband voltage shift of MIS capacitor and the parameter of the drive signal used for ava- lanche injection techniques,At the same time we explain and dis- cuss the experiment results combining electron trap,nitridation process,interface trap and minority carriers lifetime.
【CateGory Index】: TN 304.055
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【References】
Chinese Journal Full-text Database 3 Hits
1 Chen Pusheng/Department of Physics, South China University of Technology, GuangzhouYang Guangyou/Department of Physics, South China University of Technology, Guangzhou;Effects of Avalanche Hot-Electron Injection on Trapping of Rapid Thermal Nitrided SiO_xN_y Film[J];Chinese Journal of Semiconductors;1991-07
2 Chen Pusheng, Yang Jing (Dept. of Appl. Phys. ,South China Vniv. of Tech. ,Guangzhou,510641);Charge Characteristics of Rapid Thermal Nitrided SiO_xN_y Film in MIS Structure[J];Research & Progress of Solid State Electronics;1992-01
3 Cen Jieru,Chen Pusheng,Ding Xiong,He Hanxiang (Dept. of Appl. Phys. ,South China Univ. of Tech. ,Guangzhou,510641);Study of Charge Characteristics of New Dielectric Film for VLSI[J];Research & Progress of Solid State Electronics;1993-01
【Co-references】
Chinese Journal Full-text Database 3 Hits
1 Chen Pusheng/Dept. of Physics, South China University of TechnologyYang Guangyou/Dept. of Physics, South China University of TechnologyLiu Baiyong/Dept. of Physics, South China University of TechnologyLiu Zhihong/Dept. of Electrical and Electronic Engineering, University of Hong KongCheng Yaozong/Dept. of Electrical and Electronic Engineering, University of Hong Kong;Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film[J];Chinese Journal of Semiconductors;1990-06
2 Chen Pusheng/Department of Physics, South China University of Technology, GuangzhouYang Guangyou/Department of Physics, South China University of Technology, Guangzhou;Effects of Avalanche Hot-Electron Injection on Trapping of Rapid Thermal Nitrided SiO_xN_y Film[J];Chinese Journal of Semiconductors;1991-07
3 Liu Kexin,Luo Shengxu and Zheng zhongshan (Shandong Universiiy) Du Gang, Lu Dayong and Wang Zijian (Jinan Institute of Semiconductor);Effects of Dielectric Insulation Limiting Resistance on C -V Measurement[J];Microelectronics;1989-02
【Secondary References】
Chinese Journal Full-text Database 7 Hits
1 Zhang Hao,Chen Pusheng,Tian Xiaofeng,Feng Wenxiu (Dept.of Appl.Phys.,South China Univ.of Tech.,Guangzhou 510641) Liu Xiaoyang (Analysis Center,South China Univ.of Tech.,Guangzhou 510641);Electron Injection Damnification Study of Nitrogen Rich SiO xN y Thin Film at Nanometer[J];SEMICONDUCTOR TECHNOLOGY;2000-01
2 CHEN Pu-sheng1, ZHANG Hao2, FENG Wen-xiu1, LIU Jian1,LIU Xiao-yang3, WANG Feng4(1. Dept. of Appl. Phys.,South China Univ. of Tech.,Guangzhou, 510640;2. No.5 Institute of the Ministry of theInformation Industry,Guangzhou, 510610;3. Dept. of Mechanical Engi;Analysis of Auger electron spectrum and infrared absorption spectra of the SiO_xN_y thin dielectric film formed by low temperature PECVD[J];Semiconductor Technology;2002-07
3 Chen Pusheng, Yang Jing (Dept. of Appl. Phys. ,South China Vniv. of Tech. ,Guangzhou,510641);Charge Characteristics of Rapid Thermal Nitrided SiO_xN_y Film in MIS Structure[J];Research & Progress of Solid State Electronics;1992-01
4 Chen Pusheng (Dept. of Appl Phys. ,South China Univ. of Tech. ,Guanzhou,510641);Interface Traps in SiO_xN_y Thin Film Used for VLSI[J];Research & Progress of Solid State Electronics;1992-04
5 Chen Pusheng,Xu Meigen,Feng Wenxiu (Dept. of Appl. Phys. South China Univ. of Tech. ,Guangzhou,510641);DLTS Study on Interface Characteristics of Rapid Thermal Nitrided SiO_xN_y Film[J];Research & Progress of Solid State Electronics;1993-02
6 Chen Pusheng Zhang Xiaowen Feng Wenxiu Zhang Hao Zeng Shaohong (Dept. of Appl. Phys., South China Univ. of Tech., Guangzhou, 510641, CHN);Study of Trap Characteristics of Nitrogen rich SiO_xN_y Thin Film in Nanometre Range by Avalanche Hot electron Injection[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;2000-02
7 Chen Pusheng;Wang Yunxiang;Wang Yue(Dept. of Appl. Phys.,South China Univ. of Tech.,Guangzhou, 510641);Interface Nitridation Model of the Rapid Thermal Nitrided SiO_2 Film[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1995-01
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