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《Journal of South China University of Technology(Natural Science Edition)》 1990-04
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STUDY ON THE FORMATION OF CoSi_2/Si HETERE STRUCTURE AND ELECTRONIC STRUCTURE OF CoSi_2

Wang Jianming,Li Guanqi,Guan Zhongfan,Huang Meiquan Dept.of Phys.,South China Univ.of Tech.  
The ion beam sputtering equipment is used to deposit Co film onSi substrate,and then deposit a layer of amorphous Si over the Cofilm under non-ultrahigh vacuum(1.33×10~(-3)Pa),in which the sub-strate was heated and cleaned by ion beam.Then,the sample wasannealed for 30 minutes at 570—680℃ in 6.67×10~(-3) Pa.The composi-tion,chemical phase and electronic structure of the sample,wereanalysed by Auger electron spectra(AES).x-ray photoemissionspectroscopy(XPS)and ultraviolet photo-emission spectroscopy(UPS).The result showed that the Si/CoSi_2/Si hetere structure hasbeen formed,moreover,sharp interface and a little oxygen,carbonpresent in the sample.The electronic bonding energy of non-bondingpeak of Co-3d orbit in CoSi_2 is 1.2-1.4 ev.
【Fund】: 国家自然科学基金
【CateGory Index】: TN303
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