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《Journal of South China University of Technology(Natural Science Edition)》 2016-09
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Effects of Active Layer Thickness of Dual-Gate Amorphous InGaZnO Thin Film Transistors on Their Electrical Characteristics

CAI Min-xi;YAO Ruo-he;School of Electronic and Information Engineering,South China University of Technology;  
Dual-gate amorphous InGaZnO thin film transistors( DG a-IGZO TFTs) have better electrical characteristics than single-gate a-IGZO TFTs. In this paper,on the basis of a model describing the exponential distribution of defect states of a-IGZO/SiO_2 interface,the effects of the active layer thickness of DG a-IGZO TFTs on their electrical characteristics are investigated by taking into consideration the interface defect states. The results show that,as the active layer becomes thinner,the two gates of DG a-IGZO TFTs get coupled more strongly,which causes the conduction channels initially locating at the front and back interfaces of active layer to extend into the bulk of a-IGZO,thus greatly increasing the field effect mobility of DG a-IGZO TFTs. In addition,with the decrease of the active layer thickness,the field effect mobility of DG a-IGZO TFTs gradually becomes immune to the interface defect states,while the subthreshold swing becomes more sensitive to the interface defect states.
【Fund】: 国家自然科学基金资助项目(61274085)~~
【CateGory Index】: TN321.5
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【Citations】
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1 Cao Yong Tao Hong Zou Jian-hua Xu Miao Lan Lin-feng Wang Lei Peng Jun-biao(State Key Laboratory of Luminescent Materials and Devices∥Institute of Polymer Optoelectronic Materials and Devices,South China University of Technology,Guangzhou 510640,Guangdong,China);Metal Oxide Thin Film Transistors and Their Application to Novel Display Technology[J];华南理工大学学报(自然科学版);2012-10
【Co-citations】
Chinese Journal Full-text Database 6 Hits
1 HU Yu-feng;LI Guan-ming;WU Wei-jing;XU Miao;WANG Lei;PENG Jun-biao;School of Electronic and Information Engineering,South China University of Technology;State Key Laboratory of Luminescent Materials and Devices,South China University of Technology;;Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module[J];发光学报;2016-10
2 CAI Min-xi;YAO Ruo-he;School of Electronic and Information Engineering,South China University of Technology;;Effects of Active Layer Thickness of Dual-Gate Amorphous InGaZnO Thin Film Transistors on Their Electrical Characteristics[J];华南理工大学学报(自然科学版);2016-09
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