Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of South China University of Technology(Natural Science Edition)》 2016-09
Add to Favorite Get Latest Update

Active Bonding Mechanism Between Sn3.5Ag4Ti(Ce,Ga) and SiO_2 Substrate at Low Temperature

CHENG Lan-xian;LI Guo-yuan;School of Electronic and Information Engineering,South China University of Technology;  
The interfacial microstructure and soldering mechanism of the low-temperature active bonding SiO_2 substrate with Sn3. 5Ag4Ti( Ce,Ga) alloy filler were investigated by means of SEM,EDX and TEM,and the mechanism and dynamic process of the active bonding between Sn3. 5Ag4Ti( Ce,Ga) and SiO_2 substrate were analyzed on the basis of the active adsorption and reaction thermodynamics theories. Experiment results show that Ti Si and Ti O_2 phases form along the interface. Both theoretical results and experimental results indicate that the chemical adsorption of Ti on SiO_2 substrate interface may be the main reason for wetting and plays an important role in the initial bonding stage,and that the main bonding mechanism of Sn3. 5Ag4Ti( Ce,Ga) and SiO_2 substrate can be described as the interfacial reaction between Ti and SiO_2 and the forming of correspondent reactants.
【Fund】: 广东省科技计划项目(2013B010403003)~~
【CateGory Index】: TG40
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved