Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《高功率激光科学与工程(英文版)》 2016-02
Add to Favorite Get Latest Update

Ultrafast dynamical process of Ge irradiated by the femtosecond laser pulses

Fangjian Zhang;Shuchang Li;Anmin Chen;Yuanfei Jiang;Suyu Li;Mingxing Jin;Institute of Atomic and Molecular Physics,Jilin University;Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy(Jilin University);  
The ultrafast dynamic process in semiconductor Ge irradiated by the femtosecond laser pulses is numerically simulated on the basis of van Driel system. It is found that with the increase of depth, the carrier density and lattice temperature decrease, while the carrier temperature first increases and then drops. The laser fluence has a great influence on the ultrafast dynamical process in Ge. As the laser fluence remains a constant value, though the overall evolution of the carrier density and lattice temperature is almost independent of pulse duration and laser intensity, increasing the laser intensity will be more effective than increasing the pulse duration in the generation of carriers. Irradiating the Ge sample by the femtosecond double pulses, the ultrafast dynamical process of semiconductor can be affected by the temporal interval between the double pulses.
【Fund】: supported by the National Basic Research Program of China(973 Program grant no.2013CB922200);; the National Natural Science Foundation of China(grant no.11474129);; the Research Fund for the Doctoral Program of Higher Education in China(grant no.20130061110021);; the Project 2015091 Supported by Graduate Innovation Fund of Jilin University
【CateGory Index】: TN24
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved