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《Infrared Technology》 1993-06
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X-rays Topography Test of Defects in the Small Slice of HgCdTe

Cai Yi (Kunming Institute of Physics, Kunming, 650223), Zheng Guozhen, Tang Dingyuan (National Laboratory of Infrared Physics, Shanghai, 200083)  
X-rays topographs of the HgCdTe small slice, used for fabricating linear array detectors, were taken with transmission Laue method. Various crystal defects such as lattice twist, sub-grain boundaries, slip lines and other defects have observed. On basis of the wafer twist and slip model, the stress state of the small slice are studied. The experimental results show that crystal defects in the small HgCdTe slice can been non-destructively measured in resolution 20 micrometers using transmission Laue method with ordinary X-rays sources. It is clear that the cutting and polishing of HgCdTe wafers with usual technology will damage the crystal and degrade its electrical properties, and then the performance of the multi-element linear array detectors.
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