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《Infrared Technology》 2002-01
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A Theoretical Analysis of Looppole p-n Junction

XUN Su xia,CAI Yi,CHEN Ben kang (1. Nanjing University of Science and Technology, Nanjing 210094,China; 2. Kunming Institute of Physics, Kunming 650223, China)  
Based on approximately hypothesis, a loophole p n junction current model is established in this paper. It is ignored the influence of generation recombination current?tunneling current and surface leakage current, supposed the diffusion current is the main current mechanism in low temperature,and considered the electrode is connected with ohm contacts. Based on this model, the loophole p n junction's calculation expression of R0A is obtained. Because of the p type region's current density is very small compared to n type regions, we neglect the effect of n type region's current density to R 0A in concision expression. Finally, analysis and calculation are done to the result, and the R 0A 's characteristics varying with the temperature and cut off wavelength is curved. From the curve we can see that when the cut off wavelength between 3~5 μm, 77~150 K is applicable; but only when the temperature is below the 130 K, the photodiode has good performance.As for the 8~10.4 μm long wavelength photodiode, it can be work under 120 K temperature, and 100 K for the 10~14 μm.
【CateGory Index】: TN213
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