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《Infrared Technology》 2002-01
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Study on Mechanism of Efects on El2 in GaAs by Annealing and Quenching

LIU Li feng, YANG Rui xia, GUO Hui (School of Electrical Engineering and Information Technology,Hebei University of Technology,Tianjin 300130,China)  
Simple,multi step Annealings and quenchings were carried out in a temperature range from 500℃ to 1170℃ for undoped (ND) semi insulating (SI) LEC GaAs.The effects of the annealing and quenching on the EL2 concentration in GaAs are investigated and the mechanism of the effects is discussed.
【Fund】: 河北省自然科学基金资助项目 (1 950 51 )
【CateGory Index】: TN215
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【References】
Chinese Journal Full-text Database 3 Hits
1 Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China);Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET[J];Chinese Journal of Semiconductors;2005-01
2 LI Xi-yang DAI Hui-ying SHI Wei HOU Jun-yan YANG Li-na (Project University of Airforce,Xi'an University of Technology,Xi'an 710073,China);Dark Resistivity of GaAs Photoconductive-switch Before and After Break Down[J];Journal of Atmospheric and Environmental Optics;2006-06
3 Liu Hongyan Sun Weizhong Wang Na Hao Qiuyan Liu Caichi(Institute of Information Function Materials,Hebei University of Technology,Tianjin 300130);Investigation of the native defects in LEC SI-GaAs by optical microscopy[J];Modern Instruments;2008-03
【Citations】
Chinese Journal Full-text Database 2 Hits
1 Yang Ruixia(Hehei Institute of Technology, Tianjin, 300130);Study on Improving Mechanism of Uniformity of EL2Distribution in Undoped LEC SI GaAs by Heat Treatment[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1994-01
2 YANG RUIXIA(Hebei Institute of Technology)LIGUANGPING WANG QIN(Tianjin Electronic Materials Research lnstitute);DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs[J];JOURNAL OF APPLIED SCIENCES;1995-02
【Co-citations】
Chinese Journal Full-text Database 5 Hits
1 YANG Ruixia (Hebei University of Technology, Tianjin, 300130, CHN) LAI Zhanping (Tianjin Electronic Materials Reserach Institute, 300192, CHN);Effects of As Pressure Duing Annealing on Defects for Semi-insulating GaAs[J];Research & Progress of Solia State Electronics;2002-03
2 YANG Rui-xia, LIU Li-feng, GUO Hui (School of Electrical Engineering and information Technology Hebei University of Technology, Tianjin 300130, China );Effects of Quenching on Deep Donor Defect EL_2 in GaAs[J];Journal of Hebei University of Technology;2001-01
3 LIU Li-Feng, YANG Rui-Xia, GUO Hui (School of Electrical Engineering and Information Technology, Hebei University of Technology Tianjin 300130, China);The Annealing Effects on Electronic Properties for Undoped Semi-insulating LECGaAs[J];Journal of Hebei University of Technology;2001-05
4 Liu Hongyan Sun Weizhong Wang Na Hao Qiuyan Liu Caichi(Institute of Information Function Materials,Hebei University of Technology,Tianjin 300130);Investigation of the native defects in LEC SI-GaAs by optical microscopy[J];Modern Instruments;2008-03
5 Yang Ruixia1,Zhang Fuqiang2 and Chen Nuofu2 (1.Institute of Electricity and Information, Hebei University of Tech nology,Tianjin 300130,China;2.Institute of Semiconductors, Chinese Academy of Sc iences,Beijing 100083,China);Effects of Annealing on Native Defects and Electrical Properties of Undoped Semi-insulating LEC GaAs During Annealing[J];Chinese Journal of Rare Metals;2001-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Qi Yunxin(Senior Engineer,46th Research Institute,inistry of Electronic Industry,P .C .Box 55 ,Tianjin 300192);Jiang Chunxiang;QUANTITATIVE STUDY OF AB MICROSCOPIC DEFECTS IN SEMI-INSULATING GaAs SINGLE CRYSTALS[J];ORDNANCE MATERIAL SCIENCE AND ENGINEERING;1995-03
2 Zou Deshu,Lian Peng,Yin Tao,Li Shuang,Liu Ying, Gao Guo,Luo Ji,Du Jinyu,Shen Guangdi (Department of Electrical Engineering,Beijing Polytechnic University,Beijing 100022);Study of the Current Spreading Effect on Carbon Doped GaAs Lasers[J];SEMICONDUCTOR TECHNOLOGY;1999-06
3 XIE Zi-li(Nanjing Electronic Device Institute,Nanjing 210016,China);Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs[J];Semiconductor Technology;2002-07
4 ZHOU Chun-feng,LIN Jian,GUO Xin,WU Yuan-qing,ZHANG Liang,LAI Zhanping(The 46th Research Institute,CETC,Tianjin 300220,China);Carbon and Boron Residual Impurity Concentration Control in GaAs Crystal Grown by LEC[J];Semiconductor Technology;2007-04
5 Zhang Ronggui, Li Anping(The 13th Institute, Ministry of MEI, Shijiazhuang, 050051);Photoluminescence Spectra and Quality Characterization of SI-GaAs[J];;1993-03
6 Li Guangping; Li Jing; Ru Qiongna(The 46th Institute, Ministry of EI,Tianjin, 300192);Study on the Measurement of SI-GaAs Wafer[J];SEMICONDUCTOR INFORMATION;1996-03
7 He Hongjia/Institute of Semiconductors, Chinese Academy of Sciences Cao Funian/Institute of Semiconductors, Chinese Academy of Sciences Fan Tiwen/Institute of Semiconductors, Chinese Academy of Sciences Bai Yuke/Institute of Semiconductors, Chinese Academy of Sciences Fei Xueying/Institute of Semiconductors, Chinese Academy of Sciences Wang Fenglian/Institute of Semiconductors, Chinese Academy of Sciences;Investigation of Microdefects and Microprecipitates in Te-Doped GaAs[J];Chinese Journal of Semiconductors;1981-01
8 Chen Nuofu/Hebei Institute of Technology.Tianjin,300130;A New Method for Revealing Defects in GaAs/AlGaAs——Ultrasonic Aided AB Etching[J];Chinese Journal of Semiconductors;1992-12
9 Wu Ju; He Hongjia; Fan Tiwen and Wang Zhanguo(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083)Zhang Mian(13th Research Institute of MMEI, Shijiazhuang 050051);Influence of Dislocations in SI GaAs on the Side Gating Effect of MESFETs[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-07
10 Lai Zhanping, Qi Dege, Gao Ruiliang, Du Gengna, Liu Yanfeng, Liu Jianning(The 46 th Institute, The Ministry of Electronic Industry, Tianjin\ 300220)Received 9 May 1998, revised manuscript received 25 March 1999;Electricity Compensation of Semi-Insulating GaAs[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-11
【Secondary References】
Chinese Journal Full-text Database 3 Hits
1 LIU Juan,LI Yin-xin,SU Wei,SHI Shi-tai(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China);Research on breakdown character of coplanar GaAs photoconductive switch[J];Transducer and Microsystem Technologies;2009-02
2 Sun Weizhong, Niu Xinhuan, Wang Haiyun, Liu Caichi, Xu Yuesheng (Hebei University of Technology, Tianjin 300130, China);Study on Impurity and Micro-Defects of ND-SI-GaAs[J];Rare Metal Materials and Engineering;2006-10
3 LIU Qijun,LIU Zhengtang,FENG Liping(College of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China);First principle calculation of electronic structure and optical properties of zinc blende GaX(X=P,As,Sb)[J];Journal of Suzhou University of Science and Technology(Natural Science Edition);2010-03
【Secondary Citations】
Chinese Journal Full-text Database 1 Hits
1 Yang Ruixia (Hebei Institute of Technology, Tianjin, 300130) Li Guangping (Tianjin Electronic Materials Research Institute, 300220);Effect of Composition and Thermal History on Deep Doner EL2 in LEC GaAs[J];Research & Progress of Solid State Electronics;1991-04
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