Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Infrared Technology》 2007-02
Add to Favorite Get Latest Update

Mechanism Analysis of P-HgCdTe Ion Milling Junction

YAO Ying(Kunming Institute of Physics,Kunming Yunan 650223,China)  
In this dissertation,the process and mechanism of P-HgCdTe ion milling junction have already been analyzed based on micro-theory.Hg-atom diffusion-compensation model and diffusion-compensation residual donor impurities model of HgCdTe loophole P-N junction are presented.Some key physical and technological parameters(such as Hg-atom diffusion activation energy,the total amount of Hg-atom,range of diffusion,diffusion coefficient,effective Hg-atom coefficient and so on.) about loophole P-N junction and planar P-N junction formed by ion milling are presented and discussed.
【Fund】: 国防预研基金项目
【CateGory Index】: TN215
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved