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《Infrared Technology》 2014-01
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Simulation Analysis of Dark Current in Long Wavelength Infrared HgCdTe Photodiodes

LI Long;SUN Hao;ZHU Xian;North China Research Institute of Electro-optics;  
The dark current of n-on-p type LWIR based on Hg1-x Cdx Te has been simulated in this paper. Different mechanisms influences dark current are also analyzed. The results of the simulation match well with the experiments. The photodetector has a dark current Idark =9×1010 A,working resistance Rr =109 Ω, and quality factors R0 A=20 Ωcm2. According to the results,with the present technique,Shockley-Read-Hall(SRH) recombination and surface leakage current are the most influential extrinsic factors to the dark current. The recombination rate of SRH can be as high as 2×1016 /s·cm3. And the device will have a severe surface channel when the surface states reaches 1×1012 cm-2.
【CateGory Index】: TN215
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【Citations】
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