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《Infrared Technology》 2015-04
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The Photoelectrical Properties of VO_x Film by As-deposited SiO_x Dielectric Layer

KONG Ling-de;FANG Hui;WEI Hong;LIU Li;ZHOU Ruan-sheng;TIE Xiao-ying;YANG Wen-yun;JI Rong-bin;Kunmming Institute of Physics;North Guangwei Integrated Circuits Inc.;  
The photoelectrical properties of VOx film by as-deposited SiOx dielectric layer is proposed to enhance infrared ray absorption coefficient of pixel microbridge, and improves quare resistance and TCR stability of VOx active film. In this paper, we prepare a series of 50 nm VOx films by ion beam sputter deposition and then 30 nm SiOx film sare deposited. We bring in RGA and temperature condition as technical parameters to adjust Oxygenic content of VOx films, and test electrical properties of VOx film and SiOx/VOx film stack, which improves square resistance and TCR stability of VOx active film.
【CateGory Index】: O484.4
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 LEI Shu-yu;FANG Hui;LIU Jun;HE Xi;Beijing Guangwei Integrated Circuits Inc.;;Research on Domestic 640×512 Uncooled VO_x Infrared Focal Plane Array[J];Infrared Technology;2013-12
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【Co-citations】
Chinese Journal Full-text Database 5 Hits
1 GUO Yu-song;YU Zhen;ZHAO Wei-mei;China Electric Power Research Institute;;Research on the Power Operation Safety Monitoring Platform Based on Wearable Technology[J];Electric Power Information and Communication Technology;2015-01
2 WANG Yi-feng;Kunming Institute of Physics;;The Infrared Technology of China in 2013[J];Infrared Technology;2014-01
3 MO Zhao-xia;CHEN Yuan-jiang;School of Resources and Safety Engineering,Central South University;;Research and prospects of the domestic infrared thermography technology[J];Laser & Infrared;2014-12
4 KONG Ling-de;FANG Hui;YANG Chun-li;HUANG Yan-zhi;JI Yu-long;YU Lian-jie;YANG Wen-yun;JI Rong-bin;Kunmming Institute of Physics;North Guangwei Integrated Circuits Inc.;;Uncooled VO_x Infrared Focal Plane Array Pixel Optical Design and Experiment Results[J];Infrared Technology;2015-02
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