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《Infrared Technology》 2017-01
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Research on Chemical-mechanical Polishing Slurry for CdZnTe Crystal

AO Menghan;ZHU Lihui;SUN Shiwen;School of Materials Science & Engineering, Shanghai University;Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Science;  
In this paper, silica solution and NaClO were chosen as raw materials to prepare chemical-mechanical polishing slurry for Cd Zn Te crystal. The mechanism of chemical-mechanical polishing slurry to CZT was researched by analyzing the elemental state of the CZT surface with X-ray Photoelectron Spectrometer(XPS). Laser Interferometer and Atomic Force Microscope(AFM) were used to investigate the effect of NaClO content on polishing rate, surface flatness and roughness. The results show that the chemical-mechanical polishing slurry mainly reacts with Te or Cd Te, and TeO_2 is obtained. Then at a certain pressure, there is relative motion between polishing discs and CZT wafer, and the reaction film is removed under a supporting role of SiO_2 particles, which make the surface become smooth. When the NaClO content ranges from 2% to 10%, with the increase of NaClO, the PV value and roughness of CZT surface decrease at first and then increase, while the polishing rate increases all the time. When the NaClO content is 6%, the PV value and roughness reach the minimum, and the polishing surface of Cd Zn Te with high quality is obtained.
【Fund】: 红外成像与器件重点实验室开放基金项目
【CateGory Index】: TN305.2
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