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《Infrared Technology》 2019-06
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Impact of Annealing Temperature on SNR in Backside-illuminated CMOS Image Sensor: an Experimental Study

WANG Shengkai;JIN Chuan;QIAO Kai;JIAO Gangcheng;CHENG Hongchang;LIU Hui;MIAO Zhuang;Science and Technology on Low-Light-Level Night Vision Laboratory;Kunming Institute of Physics;  
We present an electron bombarded CMOS(EBCMOS) detector by combining the technology of vacuum photocathodes and backside-illuminated CMOS(BSI-CMOS) image sensors. To provide a reliable guidance for an EBCMOS application of a BSI-CMOS image sensor, annealing temperature effects on the BSI-CMOS image sensor from 100℃ to 325℃ are presented. The effects of annealing temperature on output photo response signals, fixed pattern noise, temporal noise, and signal-to-noise ratio(SNR) of the BSI-CMOS image sensor were investigated. Experimental results show that the output photo response signals of the sensor remained unchanged, fixed pattern noise increased from 32 e? to 246 e?, temporal noise increased from 51 e? to 70 e?, and the SNR decreased from 17.76 dB to 4.81 d B with an increase in annealing temperature from 300℃ to 325℃. The decreases in SNR could be attributed to the increase in the fixed pattern noise with annealing temperature increase from 300℃ to 325℃.
【Fund】: 中央军委装备发展部装备预研项目;; 中国兵器创新团队项目
【CateGory Index】: TP212;TN15
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1 TANG Jiaye;XU Pengxiao;DAI Liying;TANG Guanghua;The 55th Research Institute of China Electronic Technology Group Corporation;;Review of Hybrid Photodetector[J];光电子技术;2015-02
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