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《红外与激光技术》 1995-01
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ION BEAM INDUCING JUNCTION IN 10.6μm HgCdTe PHOTOVOLTAIC DETEC TOR FABICATION

Zhai Wensheng(8358th Institute 3rd Academy CASC Tianjin 300192)  
Ion implantation is a common-used technique for fabricating PN junction in MCT Photovoltaic(PV)detector. It is found in recent years that the techuinel is suitable for fabricating long wave MCT PV detector by applying low energy ion beam to PN junction. In this paper, the Perform-ances of 10.6μm MCT PV detectors fabricated in this way are presented.The substrate of the detector emphasized in thie paper is of P-type material with carrier concentraion of 0.8~6×10 ̄(16)cm ̄(-3). After ion beam processing,a thin N laver with low carrier concentration is formed on the surface of th e P-type MCT crystal. It is proved the large area 4-quadrant, 10.6μm MC T detector fabricated in this way has peak resposivity of 345.5 V/W, peak detectivity of 1.13×10 ̄(10)cmHz ̄(1/2) Wata -20mV bias and 80K operating tem-perature. and the sensitive area per single element is 6.88×10 ̄(-3)cm ̄2.
【CateGory Index】: TN215.04
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【References】
Chinese Journal Full-text Database 1 Hits
1 ZHAO Jin yun, ZENG ge hong, MA Zhi ling (Kunming Institute of Physics, 650223 Kunming, P. R.,China);p~+n Infrared Detectors by As Ion Implantation in HgCdTe[J];Infrared Technology;2002-04
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