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《Journal of Huaiyin Teachers College(Natural Science Edition)》 2014-01
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Rectifying Properties of Strained SrTiO_3/ GaAs Heterojunctions

YANG Wan-li;CHEN Xiao-wei;GAO Yu-ting;LI Yang;WANG Yan;ZHAI Zhang-yin;School of Physics and Electronic Electrical Engineering,Huaiyin Normal University;  
We have prepared oxygen-deficient SrTiO3 films on p-GaAs substrates using pulsed laser deposition. X-ray diffraction measurements showed that SrTiO3thin films were epitaxially grown. The I-V curves showed good rectifying properties,indicating that a p-n junction formed between SrTiO3films and GaAs interface. The electrical transport mechanism of the junction should be strain induced tunneling current. The electrical transport properties were not affected by illumination.
【Fund】: 国家自然科学基金项目(10979017);; 江苏省高校自然科学基金项目(11KJB140001);; 江苏省大学生实践创新训练计划项目(2012JSSPITP2492)
【CateGory Index】: O484.4
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