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《Laser & Infrared》 2006-01
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Saucer Pit Defects on InSb Surfaces

DU Hong-yan~1,WANG Shu-yan~1,ZHANG Gang~1,LIU Li-tian~2(1.North China Research Institute of Electro-optics,Beijng 100015,China;2.Institute of Microelectronics of Tsinghua UniversityBeijing 100084,China)  
Microdefects in the InSb wafer surface which appear as saucer pits by a preferential etching are observed and counted before or after diffusion by means of microscope.The result shows that some of the defects are native to the starting material.some of the defects are induced by diffusion.It is found that the reason induced the defects by diffusion is contamination in the InSb wafer surface.It is showed that the defects induced by diffusion are suppressed in the.clean InSb wafer surface.
【CateGory Index】: TN304
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