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《Laser & Infrared》 2007-S1
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Study of Si-substrate HgCdTe Electrical Properties

WEI Qing-zhu1,2,WU Jun1,WU Yan1,CHEN Lu1YU Mei-fang1,WANG Wei-qiang1,FU Xiang-liang1,2,HE Li1(Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)  
The research of Si/HgCdTe electrical properties through Hall and minority lifetime measurement of in-situ grown material,P-type annealed material and N-type annealed material grown by MBE is reported.Compensated property of in-situ grown Si/HgCdTe material was obtained,but the compensation was not the intrinsic character of material.By P-type annealing,Si/HgCdTe material can be converted to non-compensated material,and increased mobility was acquired.Compared with in-situ grown GaAs/HgCdTe material,Si/HgCdTe material is pending raise to a certain extent.Optimizing MBE growth technology thus improving HgCdTe quality and then increasing mobility is the crucial part of Si-sub HgCdTe.
【CateGory Index】: TN213
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