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《Laser & Infrared》 2007-S1
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Characterization Analysis of Dark Current in HgCdTe/Si Photodiodes

YUE Ting-ting1,2,YIN Fei1,2,HU Xiao-ning1(1.Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083;2.Graduated Schnol of Chinese Academy of Science,Beijing 100039,China)  
The current-voltage characteristics via temperature of mid-wavelength HgCdTe/Si photodiodes were measured and analyzed.The temperature range was from 30K to 240K,and the characteristic of R0-1000/T was measured and analyzed.The R-V curve of 60K,80K and 110K were modeled using different dark current mechanisms.The theoretical fitting of experimental data at 80K reveals the generation-recombination and trap-assisted tunneling current dominates for zero-and low-bias region.Reduction of generation-recombination and trap-assisted tunneling currents by selecting proper material and device technologies will improve our device performance.
【CateGory Index】: TN36;TN215
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