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《Laser & Infrared》 2007-S1
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Application of Microwave Photoconductivity Decay(μ-PCD) Technique in Fabrication Process of InGaAs Mesa Devices

WU Xiao-li1,2,ZHANG Ke-feng1,2,TANG Heng-jing1,2,HAN bing1,2,LI Xue1,GONG Hai-mei1(1.State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;2.Graduate School of the Chinese Academy of Sciences,Beijing 100039,China)  
The microwave photoconductivity decay(μ-PCD) technique was used to monitor the device process of mesa InGaAs detector,the results showed that ion etching brought great damage to the etched area where the minority carrier lifetime was low and lifetime uniformity of the sample became worse,and wet etching could repair the damage in certain level which resulted in higher lifetime and better uniformity,Sulfur passivation could increase the lifetime of damaged area whereas deteriorate the uniformity of lifetime distribution.The microwave photoconductivity decay(μ-PCD) technique could provide useful information for process improvement of semiconductor device.
【CateGory Index】: TN36
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【References】
Chinese Journal Full-text Database 1 Hits
1 Zhang Binhai Fang Peiyuan Wang Jiaji (Department of Material Science,Fudan University,Shanghai,200433);Infrared emission microscope and its applications in integrated circuit failure analysis[J];Analytical Instrumentation;2008-05
【Co-references】
Chinese Journal Full-text Database 2 Hits
1 ;CCD Sensor And Its Applications[J];Sensor World;2007-07
2 WANG Ying (Northeast Microelectronics Institute,Shenyang Liaoning 110032,China);Study on the ESD Protection Technology of MOS IC[J];Microelectronic Technology;2002-01
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