Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Laser & Infrared》 2007-S1
Add to Favorite Get Latest Update

Fabrication and Device Characteristics of GaN-based Avalanche Photodiodes

XU Jin-tong1,CHEN Jun1,CHEN Jie1,WANG Ling1,CHU Kai-hui1,ZHANG Yan1LI Xiang-yang1,GONG Hai-mei1,ZHAO De-gang2(1.State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;2.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)  
The development of GaN-based avalanche photodiodes was reviewed in this letter.Focused on fabricating high responsivity and low leakage current,the processes was related in detail,specially considering of physical damage induced in dry-etched course and subsequent treatment aimed to remove the damage.Due to the great rely between avalanche device and material,it is the key issue to select out top-quality material.By optimizing the processes,GaN-based avalanche photodiode was fabricated successfully,firstly in China.The effective diameter of devices was 40μm.The response of device was tested.It shows that the leakage current of the device was about 1.18×10-7 A and avalanche multiplication was determined to be about 3 when the reverse bias was 58 V.
【CateGory Index】: TN312.8
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved