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《Laser & Infrared》 2007-S1
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Variational Al Composition Crack-free AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

LIU Bin1,ZHANG Rong1,XIE Zi-li1,ZHANG Yu1,2,LI Liang1,ZHANG Zeng1,LIU Qi-jia1,YAO Jin1,ZHOU Jian-jun1,JI Xiao-li1,XIU Xiang-qian1,JIANG Ruo-lian1,HAN Ping1,ZHENG You-dou1,GONG Hai-mei3 (1.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics,Nanjing University,Nanjing 210093,China;2.Department of Physics,School of Applied Science,University of Science and Technology,Beijing 100083,China;3.Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)  
Variational Al composition AlxGa1-xN(0.13x0.8) films on(0001) sapphire grown by metalorganic chemical vapor deposition was investigated.The AlN interlayers between AlGaN and GaN template are shown to effectively reduce biaxial tensile strain in AlGaN films,thus avoiding cracks.The roughness of all AlGaN films is less than 1nm probed by atomic force microscopy.Basing on the in-situ interference spectra,the growth rate of AlGaN is dominated by TMGa flux and decreasing with elevatory Al composition.The nominal Al content of AlxGa1-xN is determined by X-ray diffraction and Rutherford backscattering,which is linear with(TMAl/TMGa+TMAl).It proves that the parasitic reaction of TMAl and NH3 is suppressed under optimized growth conditions.
【Fund】: 国家重点基础研究发展规划973(2006CB6049);; 国家高技术研究发展规划(2006AA03A103 2006AA03A118 2006AA03A142 2006AA03Z411);; 国家自然科学基金(6039070 60421003 60676057);; 教育部重大项目(10416);; 高等学校博士学科点专项科研基金(20050284004);; 江苏省自然科学基金项目(BK2005210);; 江苏省高等学校研究生创新工程基金;; 南京大学研究生科研创新基金
【CateGory Index】: TN304.05
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【References】
Chinese Journal Full-text Database 1 Hits
1 XIE ZiLi, ZHANG Tong, LIU Bin, ZHANG Rong, ZHANG Zeng, LI Yi, SONG NiHong, CUI YingChao, FU DeYi, XIU XiangQian, HAN Ping, SHI Yi, ZHENG YouDou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China;Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD[J];Science in China(Series G:Physics,Mechanics & Astronomy);2009-11
【Citations】
Chinese Journal Full-text Database 1 Hits
1 YUAN Jinshe1,2, CHEN Guangde1, ZHANG Xianbin(1. Dept. of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, CHN; 2. Dept. of Applied Physics, Xi'an University of Technology, Xi'an 710048, CHN);Research Progress in Solar-blind GaN-based Semiconductor UV Detectors[J];Semiconductor Optoelectronics;2003-01
【Co-citations】
Chinese Journal Full-text Database 6 Hits
1 HUANG Lie-yun,WU Qiong-yao,ZHAO Wen-bo,YE Si-rong,XIANG Yong-jun,LIU Xiao-qing,HUANG Shao-chun(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN);PIN Solar-blind Ultraviolet Detectors Based on AlGaN[J];Semiconductor Optoelectronics;2007-03
2 ZHANG Chun-fu,HAO Yue, ZHOU Xiao-wei,LI Pei-xian,SHAO Bo-tao (Microelectronics Institue of Xidian University , Xi′an 710071, China);Analysis of Structure and Characteristics of AlGaN PIN Ultraviolet Photodetectors[J];Journal of Electron Devices;2005-02
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5 XIA Tian,CAO Wang-he,ZHOU Li-xin,TIAN Ying,FU Yao(Opto-electronic Technology Institute,Dalian Maritime University,Dalian 116026,Liaoning,China);Preparation and Microcosmic Property Study of Titania Nanocrystals and Films[J];Fine Chemicals;2004-S1
6 XIE ZiLi, ZHANG Tong, LIU Bin, ZHANG Rong, ZHANG Zeng, LI Yi, SONG NiHong, CUI YingChao, FU DeYi, XIU XiangQian, HAN Ping, SHI Yi, ZHENG YouDou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China;Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD[J];Science in China(Series G:Physics,Mechanics & Astronomy);2009-11
【Co-references】
Chinese Journal Full-text Database 5 Hits
1 YUAN Jinshe1,2, CHEN Guangde1, ZHANG Xianbin(1. Dept. of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, CHN; 2. Dept. of Applied Physics, Xi'an University of Technology, Xi'an 710048, CHN);Research Progress in Solar-blind GaN-based Semiconductor UV Detectors[J];Semiconductor Optoelectronics;2003-01
2 WU En-chao1,JIANG Su-hua1,HU Lin-lin2,ZHANG Wei3,LI Yue-sheng1(1.Dept.Material Science,Fudan University,Nat.Microanalysis Center,Shanghai 200433,China;2.n & k Technology Inc.,California 95054,USA;3.Dept.of Microelectronics,Fudan University,Shanghai 200433,China);Optical Characterizations of Low-k Materials Using Forouhi-Bloomer Dispersion Equations[J];Semiconductor Technology;2007-06
3 JIANG Wei,LI Shu-ping,LIU Da-yi,KANG Jun-yong(Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics,Xiamen University,Xiamen,Fujian 361005,China);Study on the fitting model of AlN by ellipsometric spectroscopy[J];Journal of Fuzhou University(Natural Science Edition);2007-S1
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