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《Laser & Infrared》 2007-S1
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Growth and Characteristics of AlN Epitaxial Films

ZHANG Jie,PENG Ming-zeng,ZHU Xue-liang,YAN Jian-feng,GUO Li-wei,JIA Hai-qiang,CHEN Hong,ZHOU Jun-ming(Institute of Physics,Beijing National Laboratory for Condensed Matter Physics,Chinese Academy of Sciences,Beijing 100080,China)  
High quality AlN films were grown on sapphire by metal organic chemical vapor deposition(MOCVD) using low-temperature nucleation combined with high temperature growth.By optimizing growth conditions for AlN,a narrow full width at half maximum of 16.9 arcsec and 615 arcsec for the(002) and(105) reflections were obtained,respectively.The properties of AlN was also investigated by atomic force microscopy,Raman scattering spectra and optical transmission spectra.Sharp absorption cutoff wavelength was obtained at 204nm with a band gap energy of 6.07eV.
【CateGory Index】: TN304.05
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【Co-references】
Chinese Journal Full-text Database 8 Hits
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