Study of mesa etching for InSb infrared focal plane arrays
TAN Zhen;KANG Zhe;LI Hai-yan;North China Research Institute of Electro-optics;
As the traditional wet etching of InSb has the characteristic of isotropy,there is heavy pixel underetch,which decreases the fill factor and limits the development of large format infrared focal plane array. In this paper,BCl_3/ Ar are chosen as etch gas,and the effects of gas ratio,working pressure,RF power and ICP power on etching effect are studied based on ICP technology. The dry etching technique is obtained for In Sb FPA fabrication.
【CateGory Index】： TN305.7;TN215