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《Laser & Infrared》 2017-01
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High responsivity APD based on 0.18 μm CMOS technology

WANG Wei;CHEN Li;BAO Xiao-yuan;CHEN Ting;XU Yuan-yuan;WANG Guan-yu;TANG Zheng-wei;College of Electronics Engineering,Chongqing University of Posts and Telecommunications;  
A high responsivity APD based on 0.18 μm complementary metal-oxide-semiconductor(CMOS)process is designed.With the standard 0.18 μm CMOS technology,two P +/N-well type pn junctions are designed to form two avalanche regions in order to produce avalanche multiplication current,and the guard-ring structure is formed with STI(Shallow Trench Isolation) structure on both sides of the avalanche region,which restrains the edge-breakdown effectively.A deep N-well structure has been applied in the APD to absorb a large number of carriers before they spread to the substrate,which screened the excessed noise and improved the responsivity of the device.Though theoretical analysis,the optical window area is 10 μm × 10 μm,other structure and process parameters of the CMOS-APD are also confirmed.The simulation results show that at wavelength of 480 nm,the quantum efficiency reaches up to 90%.The avalanche gain is about 72,the responsivity is 2.96 A/W and 3 d B bandwidth is about 4.8GHz when the bias voltage is-15 V.
【CateGory Index】: TN312.7
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 ZHOU Xiang;XU Ming-yang;ZHANG Jiu-ming;The 34th Research Institute,CETC;;Design and implementation of high sensitivity APD optical receiver[J];光通信技术;2015-09
2 Wang Wei;Wang Chuan;Yan Linshu;Du Chaoyu;Wang Ting;Wang Guanyu;Wang Zhen;Feng Shijuan;College of Electronics Engineering, Chongqing University of Posts and Telecommunications;;NP type CMOS APD with high frequency bandwidth[J];红外与激光工程;2015-02
【Co-citations】
Chinese Journal Full-text Database 4 Hits
1 WANG Huaqiang;LI Chong;LIU Qiaoli;FENG Yajie;HE Xiaoying;GUO Xia;Dept.of Information, Beijing University of Technol.;National Key Lab.of Information Photon.And Opt.Commun., College of Electron.Engin., Beijing University of posts and Telecommun.;;Study of high speed photodetectors based on SOI substrate and epitaxial substrate[J];光通信技术;2018-08
2 WANG Wei;CHEN Ting;LI Jun-feng;HE Yong-chun;WANG Guan-yu;TANG Zheng-wei;YUAN Jun;WANG Guang;International Institute of Semiconductors/College of Electronics Engineering,Chongqing University of Posts and Telecommunications;Institute of Microelectronics of Chinese Academy of Sciences;;The Research of High Photon Detection Efficiency CMOS Single Photon Avalanche Diode[J];光子学报;2017-08
3 WANG Wei;CHEN Li;BAO Xiao-yuan;CHEN Ting;XU Yuan-yuan;WANG Guan-yu;TANG Zheng-wei;College of Electronics Engineering,Chongqing University of Posts and Telecommunications;;High responsivity APD based on 0.18 μm CMOS technology[J];激光与红外;2017-01
4 WANG Wei;BAO Xiao-yuan;CHEN Li;XU Yuan-yuan;CHEN Ting;WANG Guan-yu;International Institute of Semiconductors,College of Electronics Engineering,Chongqing University of Posts and Telecommunications;;A CMOS Single Photon Avalanche Diode Device with High Photon Detection Efficiency[J];光子学报;2016-08
【Secondary Citations】
Chinese Journal Full-text Database 3 Hits
1 Wang Wei;Feng Qi;Wu Wei;Xie Yuting;Wang Zhen;Feng Shijuan;College of Electronics Engineering, Chongqing University of Posts and Telecommunications;;Analysis and simulation of process and performance of silicon avalanche photodiode[J];红外与激光工程;2014-01
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