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《Laser & Infrared》 2017-01
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Electrical performance of InSb/GaAs films improved by ALE

SHANG Lin-tao;LIU Ming;ZHOU Peng;XING Wei-rong;SHEN Bao-yu;North China Research Institute of Electro-optics;  
Taking GaAs(100) as a substrate,an 85 periods InSb low temperature buffer layer with about 30 nm thick is introduced between GaAs buffer layer and InSb epitaxial layer by ALE method,which rapidly reduces the influence of lattice mismatch between InSb and GaAs on epitaxial layer,thus,the electrical properties of heteroepitaxial films will be improved.The experimental results show InSb low temperature buffer layer can rapidly release the stress of lattice mismatch and reduce defect density.Hall tests at room temperature and 77 K show the electrical properties of InSb epitaxial layer grown by ALE method are significantly improved compared with the conventional method.
【CateGory Index】: TN304
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