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《Journal of Jilin University (Science Edition)》 1992-01
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Dynamic-Single-Mode InGaAsP/InP Internal-Reflection-Interference Semiconductor Laser

Ma Dongge, Shi Jiawei, Zhang Qingyou, Jin Enshun, Ren Linfu, Shi Jinglong and Zhang Yushu (Department of Electron Science, Jilin University, Changchun)  
An 1.3 μm in GaAsP/InP internal-reflection-interference dynamic-single-mode semiconductor laser was developed. Middle-section coupled-interference-cavity was caused by proton bombardment techniques, most high singlemode operation modulation frequencies were up to 600 MHz and a sub-mode suppression ratio of 20 : 1 was obtained.
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