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《Journal of Jilin University (Science Edition)》 1992-01
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The Growth Characteristic of Double Silicon Source Selective Epitaxy and Epitaxial Lateral Overgrowth

Miao Guoqing and Liu Mingdeng (Department of Electronics Science, Jilin University, Changchun)  
Employing SiCl_4-SiH_4-Br_2-H_2 system on SiO_2 mask and utilizing epitaxial lateral overgrowth technology made SOI structure. Experiments indicate that controling the concentration of double silicon source,b value and adding Br_2 can inhibit effectively polysilicon nucleation on SiO_2 mask. Employing etching-growth process can eliminate the affect of defects on SiO_2 mask. We studied the technology of the growth of SOI structure by means of double silicon source, the effect of variation of b value on polysilicon nucleation and lateral growth velocity, observed ralation between temperature and pressure with surface morpholoy of ELO films, explored the origin and elimination of holes of ELO film. A continuous, flated and mirrorlike single crystal ELO film on SiO_2 strip with wideness of 20 μm has been obtained.
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