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《Journal of Jilin University (Science Edition)》 1992-01
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The Growth Characteristic of Double Silicon Source Selective Epitaxy and Epitaxial Lateral Overgrowth

Miao Guoqing and Liu Mingdeng (Department of Electronics Science, Jilin University, Changchun)  
Employing SiCl_4-SiH_4-Br_2-H_2 system on SiO_2 mask and utilizing epitaxial lateral overgrowth technology made SOI structure. Experiments indicate that controling the concentration of double silicon source,b value and adding Br_2 can inhibit effectively polysilicon nucleation on SiO_2 mask. Employing etching-growth process can eliminate the affect of defects on SiO_2 mask. We studied the technology of the growth of SOI structure by means of double silicon source, the effect of variation of b value on polysilicon nucleation and lateral growth velocity, observed ralation between temperature and pressure with surface morpholoy of ELO films, explored the origin and elimination of holes of ELO film. A continuous, flated and mirrorlike single crystal ELO film on SiO_2 strip with wideness of 20 μm has been obtained.
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 WANG Yue 1,2 ,SONG Bing wen 1,LIU Chao wang 1,WANG Jing yu 1, YANG Yu ling 1,JIE Wan qi 2,ZHOU Yao he 2 (1.Kunming Institute of Physics,Kunming 650223,China; 2.National Key Laboratory of Solidification Processing,Northwest Polytechnical;The Choice of Growth Technology for HgCdTe Epitaxial Growth by MOCVD[J];SEMICONDUCTOR OPTOELECTRONICS;2000-04
2 ZENG Qingke(Dept.of Physics,Guangxi Normal University,Guilin 541001)ZENG Xianfu(South China University of Technology,Guangzbou 510641);Current-controlled LPE growth of In_xGa_(1-x)As_yP_(1-y)[J];SEMICONDUCTOR OPTOELECTRONICS;1995-02
3 Luo Muchang,Yang Deren,Que Duanlin (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027);Antimony and Oxygen Impurity in Heavily Antimony doped CZ Silicon Crystals[J];SEMICONDUCTOR TECHNOLOGY;1999-05
4 You Renran/Institute of Mechanics,Academia Sinica,Beijing,100080Hu Wenrui/Institute of Mechanics,Academia Sinica,Beijing,100080;Analysis of Thermo-Solutal-Capillary Convection in Floating Zone[J];Chinese Journal of Semiconductors;1992-04
5 Zhang Hongzhi,Hu Lizhong,Sun Xiaojuan,Wang Zhijun,and Liang Xiuping(State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams, Dalian University of Technology,Dalian 116024,China);GaAs Microtips Grown by Selective LPE for SNOM Sensors[J];Chinese Journal of Semiconductors;2005-06
6 Li Xun;Chen Genxiang and Jian Shuisheng (Lightwave Tech. Res.Ins., Northern Jiaotong University,Beijing 100044);Theory and Expriment of Liquid Phase Epitaxy on Curved InP Surface[J];CHINESE JOURNAL OF SEMICONDUCTORS;1995-02
7 Wang Peilin;Zhang Guoyan and Zhou Shiren(Department of control Engineering,Harler Institute of Technology,Harbin 150001);Research on Numerical Simulation for Bridgman-Hg_(1-x)Cd_xTe Crystal Growth in Magnetic Field[J];CHINESE JOURNAL OF SEMICONDUCTORS;1996-07
8 YU Xian han (805 Factory, Baiyin 730900, China);Process Research on Crystalline to Improve PETN Bulk Density[J];Chinese Journal of Explosives & Propellants;2002-03
9 WANG Xiang-yuan,LI Wei-ming,ZHOU Xiao-wei,ZHU Yong-wei,WANG Jian-long (School of Chemical Engineering and Environment,North University of China,Taiyuan 030051,China);Influences of Recrystal Technology on the Impact Sensitivity of PETN[J];Chinese Journal of Explosives & Propellants;2009-02
10 Zang Jingcun Wu Shaohua Chen Dongli Wu Hongbin(Department of Chemical and Environmental Engineering);Study on the Composition and Lattice Constauts of ZnWO_4:Cr~(3+)[J];Journal of Beijing Polytechnic University;1991-01
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