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《Acta Scientiarium Naturalium Universitatis Jilinensis》 2001-01
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Analysis of Room Temperature PL Spectra of InAs/GaAs/InP and InAs/InP Self assembled QDs: A Five band Study

ZHANG Ye jin, WANG Xin qiang, CHEN Wei you, LIU Cai xia, WANG Ai jun, YANG Shu ren, LIU Shi yong (Department of Electronic Engineering, Jilin University, Changchun, 130023, P.R.China)  
In this paper, the room temperature PL spectra of InAs self assembled dots grown on GaAs/InP and InP substrates are presented. For analyzing different positions of the PL peaks, we examined the strain tensor in these quantum dots using a valence force field model and used a five band k·p formalism to find the electronic spectra. We found that the GaAs tensile stained layer affects the position of the room temperature PL peak. The redshift of the PL peak of InAs/GaAs/InP QDs compared to that of InAs/InP QDs is explained theoretically.
【Fund】: 国家自然科学基金 !(批准号 :6993 70 10 );; 国防科技重点实验室基金! (批准号 :99js36.2 .1jw130 1);; 吉林省青年基金! (批准号 :1999
【CateGory Index】: TN304.2+5
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