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《科学通报(英文版)》 2003-01
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Fabrication and characteristics of intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_(8+x) single crystals

YOU Lixing1, Wu Peiheng1, Cai Weixing1, Yang Senzu1, Wang Huabing2 & Kang Lin1 1. Department of Electronic Science and Engineering, Nanjing Univer-sity, Nanjing 210093, China; 2. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan Correspondence should be addressed to You Lixing (e-mail: lxyou@nju.edu.cn)  
Mesa-structured intrinsic Josephson junctionsare fabricated in Bi2Sr2CaCu2O8+x single crystals. Typicalcurrent-voltage characteristics of intrinsic Josephson junc-tions are observed, which include multiple quasi-particle branches, surface junction with critical current lower than those of inner junctions, and subgap structures on quasi-particle branches. The corresponding physical explanationsare also given. The energy gap voltage of the intrinsicJosephson junctions at 30 K is about 20 mV. Besides, themeasured Ic-T relationship agrees quite well with thetheoretical computations based on -22-wavexyd supercon-ductor. Our measured dI/dV-V relationship shows theV-shaped gap structure, obviously differing from theU-shaped gap structure of the s-wave superconductor.
【Fund】: This work was partially done in Research Institute of Elec-trical Communication; Tohoku University;; Japan;; and supported by the Ministry of Science and Technology of China (Grant No. G19990646).
【CateGory Index】: O511.2
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