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《中国物理C》 2016-01
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Test of a fine pitch SOI pixel detector with laser beam

Yi Liu;Yunpeng Lu;Xudong Ju;Qun Ou-Yang;State Key Laboratory of Particle Detection and Electronics;Institute of High Energy Physics, Chinese Academy of Sciences;University of Chinese Academy of Sciences;  
A silicon pixel detector with fine pitch size of 19 μm × 19 μm, developed based on SOI(silicon-oninsulator) technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs(minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.
【Fund】: Supported by National Natural Science Foundation of China(11375226)
【CateGory Index】: O572.212
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