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《Physical Testing and Chemical Analysis Parta Physical Testing》 2003-01
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AUGER ANALYSIS OF NANO-ZnO THIN FILMS DOPED WITH PHOSPHORUS OR BORON

WANG Wen-qing, CHEN Xiao-wei, HAN Xiao-ying, ZHAO Jin-ru (No52. Research Institute of Ordnance and Industry, Baotou 014034, China) GAO Jun (Lanya Photoelectric Technology Co. Ltd. Baotou 014031, China) SONG Shu-fang (Research Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China)  
The effect of the doped phosphorus or boron on the electrical property of Nano-ZnO thin film is investigated by Scanning Auger Microprobe (SAM ) . Results show that the electrical resistance of the Nano-ZnO thin film decreases greatly after it is doped with phosphorus or boron. If the heat-treatment temperature changed, the concentration of phosphorus or boron will be changed. And the greater the Zn/O stoichiometric ratio, the less the electrical resistance. The electrical resistance of the surface layer of the thin film reaches the lowest when the thin film is doped with phosphorus and heat-treated at 850℃ or it is doped with boron and heat-treated at 800℃.
【CateGory Index】: TB383
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