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《Microelectronics》 1988-01
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The Design of a High/Low Voltage Compatable Monolithic CMOS Driver

Qingde Zhuang, Qingyi Tong, Deying Chen and Guohong Tang (Microelectronics Center of Nanjing Institute of Technology)  
Using standard n-well Si-gate isoplanar CMOS process, a compatable monolithic IC is made, into which an NMOS high-voltage power device with working voltage up to 200V and sink current over 200mA and a CMOS control circuit operating at 5V supply voltage is integrated. An analysis of the design of the circuit and the processing steps is made.It is demonstrated that different high/low voltage compatable circuits can be fabricated at low cost using this technology.
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 ZHANG Yuanyuan, DING Shuangpeng,CHEN Bingruo(Physics Science and Technical College,Wuhan University, Wuhan 430072, CHN);Research and Development on Purple-blue Sensitivity of Si Color Sensor with Double P-N Junction[J];Semiconductor Optoelectronics;2003-04
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7 Chen Pusheng;Feng Wenxiu; Wang Chuan; Wang Feng; Liu Xiaoyang;Tian Wanting and Zeng Shaohong (Department of Applied Physics, South China University of Technology, Guang Zhou 510641)(Information Research Institute, South Stone Company, Guang Zhou 510630)(;SiO_xN_y Thin Film Formed by Low Temperature PECVD and Its Electrical Characteristics for Thin Dielectric Gate Application[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-10
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9 Qi Dong 1 ,Wang Ninghui 1 ,Huang Yao 1 ,Tan Chengzhong 2 (1.Department of Electrical and Electronic,Dalian Univ.of Technol.,Liaoning Dalian116024,China;2.Liangjin Electrical Agency of Science,Liaoning Jinzhou121000,China);The development of intelligent detecting system for anti-stealing electric energy[J];Electrical Measurement & Instrumentation;2002-10
10 WANG Li-yu1, XIE Jia-chun1, LIN Bi-xia1,2,WANG Ke-yan1, FU Zhu-xi1 (1. Department of Physics University of Science and Technology of China, Hefei 230026, China; 2.Special Class for the Gifted Young, University of Science and Technology of China, Hefei 230026, China);Study on n-ZnO/p-Si Heterojunction UV Enhanced Photoelectric Detectors[J];Electronic Components $ Materials;2004-01
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