Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Microelectronics》 1988-01
Add to Favorite Get Latest Update

The Design of a High/Low Voltage Compatable Monolithic CMOS Driver

Qingde Zhuang, Qingyi Tong, Deying Chen and Guohong Tang (Microelectronics Center of Nanjing Institute of Technology)  
Using standard n-well Si-gate isoplanar CMOS process, a compatable monolithic IC is made, into which an NMOS high-voltage power device with working voltage up to 200V and sink current over 200mA and a CMOS control circuit operating at 5V supply voltage is integrated. An analysis of the design of the circuit and the processing steps is made.It is demonstrated that different high/low voltage compatable circuits can be fabricated at low cost using this technology.
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 10 Hits
1 ZHANG Yuanyuan, DING Shuangpeng,CHEN Bingruo(Physics Science and Technical College,Wuhan University, Wuhan 430072, CHN);Research and Development on Purple-blue Sensitivity of Si Color Sensor with Double P-N Junction[J];Semiconductor Optoelectronics;2003-04
2 SHI Zhongbin ( Microelectronic Technology Research Center,CSRDA,Wuhan 430072,CHN);Survey on injection photodetectors[J];SEMICONDUCTOR OPTOELECTRONICS;1997-04
3 Guo Weilian,Zhang Peining,Zheng Yunguang,Li Shurong,Zhang Shilin (College of Electronic Information Engineering,Tianjin University,Tianjin 300072);The Photo controlled Current Switching in Photo Dual Base Transistor[J];SEMICONDUCTOR TECHNOLOGY;2000-01
4 QI Dong , WANG Ning-hui(Department of Electrical and Electronics Engineering, Dalian University of Technology,Dalian 116024, China);The design and analysis of current/voltage supply based on PWM[J];Semiconductor Technology;2004-01
5 Ruan Ying-chao/Heilongjiang University;THEORETICAL ANALYSIS OF THE HALL EFFECT OF THE JUNCTION FIELD EFFECT TRANSISTOR[J];Chinese Journal of Semiconductors;1980-02
6 Sun Qinsheng/Department of Physics, Nanjing University;Direct Determination of the Bulk Generation Lifetime Distribution and Surface Generation Velocity of Minority Carriers by the MOS-C Transient Current-Capacitance Method[J];Chinese Journal of Semiconductors;1982-01
7 Chen Pusheng;Feng Wenxiu; Wang Chuan; Wang Feng; Liu Xiaoyang;Tian Wanting and Zeng Shaohong (Department of Applied Physics, South China University of Technology, Guang Zhou 510641)(Information Research Institute, South Stone Company, Guang Zhou 510630)(;SiO_xN_y Thin Film Formed by Low Temperature PECVD and Its Electrical Characteristics for Thin Dielectric Gate Application[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-10
8 Li Guozheng Liu Runmin(Xian Jiaotong Univ. );The Study on R-T Character of Silicon Thermal Resistor[J];Journal of Transcluction Technology;1995-02
9 Qi Dong 1 ,Wang Ninghui 1 ,Huang Yao 1 ,Tan Chengzhong 2 (1.Department of Electrical and Electronic,Dalian Univ.of Technol.,Liaoning Dalian116024,China;2.Liangjin Electrical Agency of Science,Liaoning Jinzhou121000,China);The development of intelligent detecting system for anti-stealing electric energy[J];Electrical Measurement & Instrumentation;2002-10
10 WANG Li-yu1, XIE Jia-chun1, LIN Bi-xia1,2,WANG Ke-yan1, FU Zhu-xi1 (1. Department of Physics University of Science and Technology of China, Hefei 230026, China; 2.Special Class for the Gifted Young, University of Science and Technology of China, Hefei 230026, China);Study on n-ZnO/p-Si Heterojunction UV Enhanced Photoelectric Detectors[J];Electronic Components $ Materials;2004-01
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved