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《Microelectronics》 1988-04
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The Electrical Design of a Novel LDMOS Device——Resurf LDMOS

Li Zhiqi (Shanghai Jiaotong University)  
This paper briefly introduces a latest technique—Resurf technique widely used in LDMOS and its breakdown mechanism. Some design concepts for the device on its breakdown voltage, on-resistance and epi-layer resistivity are presented.
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