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《Microelectronics》 1989-01
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The Application of Ion Implantation to the Al-Si Interface

Yang Yixiang (Sichuan Institute of Solid-state Circuits)  
An experiment was conducted to improve the nonuniform dissolution at the Al-Si interface and the electric beheavior of the shallow junction. It is shown that the junction leakage for implanted sample has been significantly improved, compared with unimplanted sample.
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