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《Microelectronics》 1989-01
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Design and Development of Integrable High Voltage LDPMOSFETs

Zhao Yuanfu (Lishan Microelectronics Corp.)  
The optimal implanting dose of boron for p- drift region is obtained through the designing and development of integiable high voltage LDPMOSFETs, and the effect of p- drift region length and field plate on breakdown voltage is analysed. Using 3~6 ohm.cm n-type(l00) silicon crystal,an LDPMOSFET having a source-drain breakdown voltage of 310V, close to the bulk breakdown voltage of the material, has been achieved.
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【References】
Chinese Journal Full-text Database 1 Hits
1 Zhao Yuan-fu Sun Long-jie Wang Fang (Li-Shan Microelectronics Institute);Development of A 500V High Voltage Integrated Circuit LCH1016[J];Microelectronics & Computer;1991-11
【Co-references】
Chinese Journal Full-text Database 1 Hits
1 Zhao Yuan-fu and Li Yin-bo(Li-Shan Microelectronies Inst.);Development of A 200V MOS High Voltage Integrated Circuit[J];Microelectronics & Computer;1989-04
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