Electrical Characteristics of Directly Nitrided Thermal Si0_2 Thin Film
Qi Ming and Luo Jinsheng (Department of Electronic Engineering, Xi'an Jiaotong University)
Thermally nitrided SiO_2 thin film prepared by high temperature annealing in ammonia ambience may be a suitable dielectric film for VLSI technology. In this paper, a comprehensive analysis on the electrical characteristics of this film, including interfacial properties, dielectric features, electron trap parameters and the ability of impurity diffusion masking, is made using a variety of methods. The effects of thermal nitridation on threshold voltage and surface electron 、mobility are investigated by means of an MOSFET with nitrided SiO_2 as gate insulator.