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《Microelectronics》 1989-02
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Compensation Design for Temperature Drift and Offset Voltage of a Linear Hall-effect IC

Lai Zongsheng, Wu Guangli and Jiang Hao (Dept,Electronic Science, East China Teachers' University) Lu Xiaoming, Huo Taimin and Chen Zhijun (Shanghai No. 16 Semiconductor Device Factory)  
Approaches to the implementation of compensations for temperature drift and offset voltage of a device are given in this paper. Also presented are considerations on the structural design of the circuit, selection of process parameters and the layout design. Experimental results show that a temperature drift equal to or less than 0.2%℃ and an offset voltage drift of 100~200 mV for an actual derice, which meet the requirements for applications, have been achieved through the compensation designing.
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