Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Microelectronics》 1989-02
Add to Favorite Get Latest Update

Effects of Dielectric Insulation Limiting Resistance on C -V Measurement

Liu Kexin,Luo Shengxu and Zheng zhongshan (Shandong Universiiy) Du Gang, Lu Dayong and Wang Zijian (Jinan Institute of Semiconductor)  
The effects of SiO2 dielectric insulation limiting resistance on the accuracy of C-V measurements at high frequency and quasi-static are described in this paper.Because of the fairly low frequency and small MOS capacitance of about 100pF, especially for the quasi-static measurement, the resultant displacement current ranges from 10(-9)A to 10(-14)A. As a result, the leakage current caused by the limiting resistance has a considerable influence on the accuracy of the measurement. Therefore, in the presence o?leakage current, the calculation of the mterface state density should only be made with the leakage current eliminated from the measured results.
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 2 Hits
1 P. S. Chenn; S. P. Wang; J. R. Cen; K. H. Lee and C. J. Dong (Department. of Applied. Physics., South China University. of Technology. GUangzhou 510641) ( Department. of Electronic Engineering. and Material Technology Reasearch Canter, The ChineseUniversi;Charge Characteristics and Optical Properties of Rapid Thermal Nitride SiO_xN_y Thin Dielectric Film[J];CHINESE JOURNAL OF SEMICONDUCTORS;1996-02
2 Cen Jieru,Chen Pusheng,Ding Xiong,He Hanxiang (Dept. of Appl. Phys. ,South China Univ. of Tech. ,Guangzhou,510641);Study of Charge Characteristics of New Dielectric Film for VLSI[J];Research & Progress of Solid State Electronics;1993-01
Chinese Journal Full-text Database 5 Hits
1 Chen Pusheng/Dept. of Physics, South China University of TechnologyYang Guangyou/Dept. of Physics, South China University of TechnologyLiu Baiyong/Dept. of Physics, South China University of TechnologyLiu Zhihong/Dept. of Electrical and Electronic Engineering, University of Hong KongCheng Yaozong/Dept. of Electrical and Electronic Engineering, University of Hong Kong;Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film[J];Chinese Journal of Semiconductors;1990-06
2 Yang Guangyou;Chen Pusheng and Zheng Xueren Dept.of Physics,South China Univ.of Tech.;AVALANCHE INJECTION OF HOT-ELECTRON FROM SILICON INTO RAPID THERMAL NITRIDED SIO_2 FILM[J];Journal of South China University of Technology(Natural Science Edition);1990-01
3 MO DANG CHEN SHU-GUANG YU YU-ZHEN HUANG BING-ZHONG (Department of Physics, Zhongshan University);ELLIPSOMETRIC SPECTRA OF SiO_2 FILMS ON SILICON[J];Acta Physica Sinica;1980-05
4 LIU ZHI-HONG Department of Electrical and Electronic Engincering University of Hong Kong CHEN PU-SHENG LIU BAI-YONG Department of Physics, South China University of Technology, Guangzhou, 510641 CHENG YAO-ZONG Department of Electronic Engineeringr City Polytechnic of Hong Kong;BREAKDOWN CHARACTERISTICS OF RAPID THERMAL NITRIDED SiO_2 FILM OF 150 THICKNESS[J];Acta Physica Sinica;1991-01
5 YANG BING-LIANG LIU BAI-YONG CHEN DOU-NAN Department of Physics, South China University of Technology, Guangzhou, 510641 Y. C. CHENG University of Hong Kong;MICROSTRUCTURE OF SiOrN_y THIN FILMS AND A NEW MODEL FOR THE CURRENT TRANSPORT MECHANISM[J];Acta Physica Sinica;1991-02
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 Chen Pusheng;Wang Yunxiang;Wang Yue(Dept. of Appl. Phys.,South China Univ. of Tech.,Guangzhou, 510641);Interface Nitridation Model of the Rapid Thermal Nitrided SiO_2 Film[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1995-01
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved