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《Microelectronics》 1989-03
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Automatic Measurement of Carrier Concentration Profiles in Silicon Structures

Luo Jiangcai (Chongqing Optoelectronics Research Institute)  
The measurement of carrier concentration profiles over a wide range of doping le-vels and depths by using automatic electrochemical C-V profiling technique is described. Automatic carrier concentration profile plotting of silicon structures, such as diffused layers,ion implanted layers and epitaxial layers, can be made using this technique, which features easy operation and high resolution and is capable of measuring high carrier concentration values without depth limitation.
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