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《Microelectronics》 1989-03
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The Anomalous C-V Curves of MOS Structures in Quasi-Static Measurement

Liu Kexin, Luo Shengxu and Zheng Zhongshan (Shandong University) Wang Jichun and Wang Zijian (Ji'nan Institute of Semiconductor)  
The anomalous curves of MOS structures in quasi-static capacitance-, oltagc measurements are reported in this paper, and reasons for the generation of these curves are discussed.
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