High Frequency Plasma Annealing for Smoothing the Reference Linne of a CCD
Yang Jianlu (Sichuan Institute of Solid-State Circuits)
Experiments show that large number of electron traps induced by the unfit stress on Si-SiO2-polysilicon interface at external forces are responsible for fluctuations of the CCD reference line. Using O2 + CF4 as processing gas, a process of high frequency plasma annealing has been developed, effectively removing the electron traps and thus making the line smooth, and also improving the transition frequency. It is also demonstrated that the electron traps inducing the fluctuations of the CCD reference line are traps of deep energy level.