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《Microelectronics》 1989-04
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Implantation of N_2~+ Into Silicon for Selective Oxidation

Yang Yixiang (Sichuan Institute of Solid-State Circuits)  
A experiment on selective oxidation on a single wafer under the same conditions is described in this paper.Implanted and unimplanted samples were dry-and wet-oxidized at l000@@@ for SiO2. It was shown that oxide layer for N+2 implanted wafers were much thinner than those for unimplanted samples. It is clear that implantation of N+2 into silicon snrface takes an active part in the suppression of SiO2 growth during oxidation. The experiment demonstrates that it is possible to selectively oxidize a wafer under the same conditions by implanting N+2 into silicon.
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