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《Microelectronics》 1989-04
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Effect of Reactor Structure and Process Parameters on the Uniformity of PVD Si0_2 Films

Jin Junhai, Sun Qing, Sun Jiancheng and Fu Jumxing (Dept. of Physics, University of Electronic Science and Technology of Xi'an)  
Based on gas flow models, the correlation of reactor structure with the uniformity of photochemical vapor deposited (PVD) SiO2 films has been investigated and effect of process parameters on the uniformity of the film is discussed in this paper.
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