The Developing Silicon-on-lnsulator Material Technology
Cai Yongcai (Sichuan Institute of Solid-State Circuits)
Silicon-On-Insulator is a very promising material in applications to the fabrication of highly reliable,radiation hard ICs and the future submicron CMOS FET V-LSI ICs. In this paper, a review of possible techniques fcr the formation of SOI structures, their acvantsges and disacvantages, their current status and fu- ture prospects is presented. The SOI investigation activities in China are also briefly introduced.