Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Microelectronics》 2002-01
Add to Favorite Get Latest Update

Techniques for SiC MESFET and Its Features

XU Chang-fa,YANG Yin-tang (Research Inst. Microelectronics,Xidian Univ., Xi'an, Shaanxi 710071, P. R. China)  
Techniques for SiC MESFET and its features are described in the paper. The MESFET fabricated on SiC substrate has shown an RF power density of 4.6 W/mm and a PAE of 65.7%. In addition, it also achieves a breakdown voltage over 100 V. It is demonstrated that, with high power density and high efficiency, SiC devices have an enormous potential in high power microwave applications.
【Fund】: 国家自然科学基金资助项目 (6 9776 0 2 3) ;; 教育部“跨世纪人才基金”资助项目
【CateGory Index】: TN304.24
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 1 Hits
1 Wen Jian Zeng Jian-ping Yan Min (Department of Applied Physics,Hunan University,Hunan Changsha 410082,China);The Utilities and the Prospect of the Microwave Power Device[J];Electronics & Packaging;2005-11
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Yang Kewu,Pan jing (The 13th Institute(Electronics),Shijiazhuang 050051) Yang Yintang (Xian University of Science and Technology,Xian 710071);Techniques of SiC Semiconductor Materials and Devices[J];SEMICONDUCTOR INFORMATION;2000-02
2 AN Xia, ZHUANG Hui-zhao, YANG Li, XUE Cheng-shan, LI Huai-xiang(Institute of Semiconductor, Shandong Normal University, Ji'nan 250014, China);Annealing effects of nano-SiC film grown on Si (111) by magnetron sputtering method[J];Semiconductor Information;2002-05
3 SHAO Qing-hui, LI Bei, YE Zhi-zhen (State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China);Research progress on AlGaN/GaN-based HEMT[J];Micronanoelectronic Technology;2003-02
4 LI Xiao-bai(National Key Laboratory of ASIC,The 13th Reserch Institute,CETC,Shijiazhuang 050051,China);Scientific problems of electro-material & -device of SiC and GaN[J];Micronanoelectronic Technology;2004-11
5 Zhou Huimei 1,Shen Bo 1,Zhou Yugang 1,Liu Jie 1,Zheng Zewei 1,Qian Yue 1,Zhang Rong 1, Shi Yi 1,Zheng Youdou 1,Cao Chunhai 2,Jiao Gang 2 and Chen Tangsheng 2(1 Department of Physics,Nanjing University,Nanjing 210093,China) (2 Nanjing Electr;Metal/n-AlGaN Ohmic Contact[J];Chinese Journal of Semiconductors;2002-02
6 Yu Mingbin,Yang An,Yu Ningmei and Ma Jianping(Department of Electronics Engineering,Xi'an University of Technology,Xi'an 710048,China);Nanocrystalline Silicon Carbide Films Deposited by ECR Chemical Vapour Deposition and Its Photoluminescence[J];Chinese Journal of Semiconductors;2002-03
7 Zhang Jinwen,Yan Guizhen,Zhang Taiping,Wang Wei,Ning Baojun and Wu Guoying ( Institute of Microelectronics,Peking University,Beijing 10 0 871,China);Fabrication of Au-AlGaN/GaN HFET and Its Properties[J];Chinese Journal of Semiconductors;2002-04
8 Qian Yongxue,Liu Xunchun,Wang Runmei and Shi Ruiying(Microelectronics R&D Center,The Chinese Academy of Sciences,Beijing100029,Chi na);Self-Aligned GaInP/GaAs HBT Device[J];Chinese Journal of Semiconductors;2002-05
9 Chang Yuchun 1,Cui Hongfeng 1,Wang Jinzhong 1,Song Junfeng 1, Hailin Luo 2,Y Wang 2 and Du Guotong 1(1 School of Electronic Science & Engineering,Jilin University,Jilin University Region, State Key Laboratory on Optoelectronics,Changchun 130023;Effect of Vertical Emitter Ballasting Resistors on the Emitter Current Crowding Effect in Heterojunction Bipolar Transistors[J];Chinese Journal of Semiconductors;2002-06
10 Cai Yong 1,Zhang Lichun 1,Gao Yuzhi 1,Ye Hongfei 1,Jin Haiyan 1 and Zhang Shudan 2(1 Institute of Microelectronics,Peking University,Beijing 100871,China) (2 Nanjing Electronic Devices Institute,Nanjing 210016,China);2-D Thermal Numeric Simulation of Microwave Power Bipolar Transistor and Nonuniform Power Density Design[J];Chinese Journal of Semiconductors;2003-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved