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《Microelectronics》 2002-01
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Techniques for SiC MESFET and Its Features

XU Chang-fa,YANG Yin-tang (Research Inst. Microelectronics,Xidian Univ., Xi'an, Shaanxi 710071, P. R. China)  
Techniques for SiC MESFET and its features are described in the paper. The MESFET fabricated on SiC substrate has shown an RF power density of 4.6 W/mm and a PAE of 65.7%. In addition, it also achieves a breakdown voltage over 100 V. It is demonstrated that, with high power density and high efficiency, SiC devices have an enormous potential in high power microwave applications.
【Fund】: 国家自然科学基金资助项目 (6 9776 0 2 3) ;; 教育部“跨世纪人才基金”资助项目
【CateGory Index】: TN304.24
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