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《Microelectronics》 2008-01
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Optimized Compact Model and Parameter Extraction Method for SiGe HBT

CHEN Wei-wei1,ZHOU Wei1,LIU Dao-guang1,2,XU Jun1(1.Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China;2.National Laboratory of Analog IC's;Sichuan Institute of Solid-State Circuits,CETC,Chongqing 400060,P.R.China)  
By properly simplifying and optimizing MEXTRAM model,an optimized compact model and parameter extraction method for SiGe HBT is developed.Using this model and method,parameters of a microwave SiGe HBT are accurately extracted,and the disagreement between simulated result and measurement is less than 3%.
【Fund】: 国防科技重点实验室基金资助项目(9140C090201060C0903)
【CateGory Index】: TN322.8
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【References】
Chinese Journal Full-text Database 1 Hits
1 ZHOU Peiming1,2,FU Jun1,2,ZHOU Tianshu3,LI Pingliang3,XU Xiangming3, WANG Yudong1,2,ZHANG Wei1,2,CUI Jie1,2,LIU Zhihong1,2(1.Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China; 2.Tsinghua National Laboratory for Information Science and Technology,Beijing 100084,P.R.China; 3.Shanghai Huahong NEC Electronics Company,Ltd,Shanghai 201206,P.R.China);Direct Parameter Extraction for SiGe HBT MEXTRAM Model[J];微电子学;2011-05
【Co-references】
Chinese Journal Full-text Database 1 Hits
1 CHEN Wei-wei1,ZHOU Wei1,LIU Dao-guang1,2,XU Jun1(1.Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China;2.National Laboratory of Analog IC's;Sichuan Institute of Solid-State Circuits,CETC,Chongqing 400060,P.R.China);Optimized Compact Model and Parameter Extraction Method for SiGe HBT[J];微电子学;2008-01
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