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《Microelectronics》 2008-01
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Thermal Analysis of Power SiGe Heterojunction Bipolar Transistor with Novel Segmented Multi-Emitter Structure

WANG Yang,ZHANG Wan-rong,XIE Hong-yun,JIN Dong-yue,QIU Jian-jun(School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,P.R.China)  
An effective method for enhancing thermal stability of a multi-emitter power heterojunction bipolar transistor(HBT) was presented.A suitable thermal model,which includes various thermal resistances of different components,was built for the segmented multi-emitter HBT.Using this model,thermal simulation for a ten-finger power SiGe HBT with segmented emitter structure was conducted with ANSYS software.Considering the precision of the simulation and the restriction of ANSYS software,a two-step simulation method was proposed: 1) substrate simulation and 2) active region simulation.Three-dimensional temperature distribution on emitter fingers was obtained from simulation.Compared with non-segmented structure,the maximum junction temperature,thermal resistance of the power HBT with improved structure was significantly lower as expected,and the thermal stability was improved.
【Fund】: 国家自然科学基金资助项目(60376033);; 北京市教委资助项目(KM200710005015);; 北京工业大学第5届研究生科技基金资助项目(ykj-2006-282);; 北京市属市管高等学校人才强教计划资助项目(102(KB)-00856)
【CateGory Index】: TN322.8
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【References】
Chinese Journal Full-text Database 3 Hits
1 Chen Liang,Zhang Wanrong,Jin Dongyue,Xiao Ying,Wang Renqing,You Yunxia(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China);Technology for Improving Thermal Stability of SiGe HBTs Under Different Ambient Temperatures[J];Semiconductor Technology;2011-02
2 CHEN Liang,ZHANG Wan-rong,JIN Dong-yue,XIE Hong-yun,HU Ning,XIAO Ying,WANG Yang(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China);Design and Thermal Analysis of SiGe HBT With Composite Structure of Segmented Emitter and Non-uniform Finger Spacing[J];Journal of Beijing University of Technology;2011-05
3 HU Ning,ZHANG Wanrong,XIE Hongyun,JIN Dongyue,CHEN Liang,SHEN Pei, HUANG Lu,HUANG Yiwen,WANG Yang (College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,P.R.China);Thermal Analysis of Power SiGe HBT with Novel Composite Emitter Structure[J];Microelectronics;2010-02
【Co-references】
Chinese Journal Full-text Database 8 Hits
1 Chen Jingbo1,2,He Xiaoqi2,Bao Hengwei3(1.Guangdong University of Technology,Guangzhou 510075,China;2.CEPREI,Guangzhou 510610,China;3.The 43th Reseach Institute,Hefei 230023,China);Thermal Simulation and Optimization of Thick-Film DC/DC Power[J];Semiconductor Technology;2010-06
2 Yu Shufen,Chen Yanhu,Li Huijun,Feng Shanggong,Guo Qi (College of Information Science and Engineering,Shandong University,Ji'nan 250100,China);Effect of the Base Design on the Thermal Stability of InGaP/GaAs HBTs[J];Micronanoelectronic Technology;2012-02
3 Jin Dongyue,Zhang Wanrong,Shen Pei,Xie Hongyun,and Wang Yang(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China);Multi-Finger Power SiGe HBT with Non-Uniform Finger Spacing[J];Chinese Journal of Semiconductors;2007-10
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6 ZHANG Wan-rong,HE Li-jian,XIE Hong-yun,YANG Jing-wei,JIN Dong-yue,XAO Ying,SHA Yong-ping,WANG Yang,ZHANG Wei (School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing,100022,P.R.China);Electrical-Thermal Couple and Optimization Design of Power Si/SiGe HBT's with Multi-Finger Emitter Stripes[J];Microelectronics;2006-05
7 KONG Yue-chan,ZHENG You-dou(Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,22# Hankou Road,Nanjing 210093);PROGRESS IN TWO-DIMENSIONAL ELECTRON GAS IN GROUP-Ⅲ-NITRIDE HETEROSTRUCTURES[J];Progress in Physics;2006-02
8 Zhang Guang-Chen,Feng Shi-Wei,Zhou Zhou,Li Jing-Wan,and Guo Chun-Sheng School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method[J];中国物理B;2011-02
【Secondary References】
Chinese Journal Full-text Database 5 Hits
1 Zhang Yujie,Zhang Wanrong,Jin Dongyue,Chen Liang,Fu Qiang,Zhao Xin(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China);Thermal Characteristics of Multi-Finger SiGe HBTs with Different Ge Profile in Base Region[J];Semiconductor Technology;2012-06
2 Yu Shufen,Chen Yanhu,Li Huijun,Feng Shanggong,Guo Qi (College of Information Science and Engineering,Shandong University,Ji'nan 250100,China);Effect of the Base Design on the Thermal Stability of InGaP/GaAs HBTs[J];Micronanoelectronic Technology;2012-02
3 WANG Renqing,ZHANG Wanrong,JIN Dongyue,CHEN Liang,DING Chunbao,XIAO Ying,SUN Botao,ZHAO Xin(School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China);Research on Multi-Finger SiGe HBT with Emitter Segmented Structure Based on Finite Element Method[J];Chinese Journal of Electron Devices;2010-06
4 ZHAO Xin,ZHANG Wanrong,JIN Dongyue,XIE Hongyun,FU Qiang,ZHANG Donghui,LIU Boyu,ZHOU Yongqiang(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,P.R.China);Non-Uniform Emitter Spacing for Improving Thermal Stability of HBT[J];Microelectronics;2011-04
5 ZHAO Xin,ZHANG Wanrong,JIN Dongyue,XIE Hongyun,FU Qiang,ZHANG Donghui(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,P.R.China);Effects of Ge-Profile on Thermal Characteristics of SiGe HBT[J];Microelectronics;2012-02
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