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《Microelectronics》 2009-01
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Multi-finger GG-NMOS ESD Protection Circuit

XU Wei,FENG Quanyuan(Institute of Microelectronics,Southwest Jiaotong University,Chengdu 610031,P.R.China)  
An ESD protection circuit with multi-finger GGNMOS(Gate-Grounded NMOS) structure was presented.The operational principle of the circuit was described and ESD experiment was made.Factors affecting ESD performance of the circuit were analyzed theoretically.A protection circuit using improved gate-coupling technology was proposed,and the anticipated design target was achieved.Test results showed that the circuit reached HBM Class 2(2 000~4 000 V).
【CateGory Index】: TN432
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