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《Microelectronics》 2009-01
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Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET

WANG Wei,WANG Yuqing,SHEN Junjun,TANG Zhengwei,MI Junjie (College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,P.R.China)  
C-V characteristics of 6H-SiC buried-channel MOSFET analytical model were investigated.C-V relationship in accumulation,inversion,depletion and pinch-off modes was discussed,and C-V characteristics in depletion mode and pinch-off mode were investigated in particular.Effects of the interface states in SiO2/SiC interface and p-n junction on C-V characteristics were taken into consideration in the model.Simulation results showed that the numerical results fit well with experimental data,and the discrepancy between two curves was due to the assumption of uniform distribution of interface state in the analytical model.
【Fund】: 重庆市科委自然科学基金资助项目(CSTC2006BB2364)
【CateGory Index】: TN386
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 Gao Jinxia,Zhang Yimen,and Zhang Yuming(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China);C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC[J];Chinese Journal of Semiconductors;2006-07
2 Gao Jin-Xia Zhang Yi-Men Tang Xiao-Yan Zhang Yu-Ming(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET[J];Acta Physica Sinica;2006-06
【Co-citations】
Chinese Journal Full-text Database 3 Hits
1 WANG Yu-qing,WANG Wei,SHEN Jun-jun(College of Electronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,P.R.China);C-V characteristics of 6H-SiC buried-channel MOSFET[J];Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition);2009-01
2 Zhang Muhui,Liu Shibin,Tang Xiuqing,Ye Kan(College of Electronics and Information,Northwestern Polytechnical University,Xi'an 710072,China);Novel Current Reference Source with Little Influence by Process Parameter[J];Computer Measurement & Control;2008-09
3 ZHANG Mu-hui,LIU Shi-bin,FENG Yong(College of Electronics and Information,Northwestern Polytechnical University,Xi'an 710072,China);Over Temperature Protect Circuit with Hysteresis[J];Instrument Technique and Sensor;2009-02
【Secondary Citations】
Chinese Journal Full-text Database 3 Hits
1 SHANG YE-CHUN ZHANG YI-MEN ZHANG YU-MING (Microelectronics Institute,Xidian University,Xi'an\ 710071,China);MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS[J];Acta Physica Sinica;2001-07
2 Yang Lin An\ Zhang Yi Men\ Gong Ren\|Xi\ Zhang Yu Ming (Microelectronics Institute, Xidian University ,Xi'an\ 710071, China);Analysis of self-heating effect on 4H-SiC RF power MESFETs[J];Acta Physica Sinica;2002-01
3 Tang Xiao Yan Zhang Yi Men Zhang Yu Ming (Institute of Microelectronics, Xidian University, Xi'an 710071, China);Analysis of the effect of interface state charges on threshold voltage and transconductance of 6H-SiC N-channel MOSFET[J];Acta Physica Sinica;2002-04
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